product

6 inch mono-crystal silicon wafer

Conductivity type

p-type

Resistivityohm.cm

0.5-3.0 3.0-6.0

Crystal silicon trend

100±3°

Carbon contentatoms/ cm

5*10¹⁶

Oxygen contentatoms/ cm

1.0*10¹⁸

Minority carrier lifetime (μs)

10 20

Base area(mm)

125*125±0.5

Crystal silicon Diameter (mm)

150±1.0

Thickness (μm)

200±20

The change of total thickness (μm)

<30

the situation of surface

Clean and inviolateness

Appearance

 No crack